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2026年6月10日至12日,富加镓业携多款氧化镓材料及相关产品亮相2026未来产业新材料博览会(FINE 2026)
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusio ...