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2026年5月14日,杭州,国际半导体与集成电路产业创新展览会(简称“长芯展”)现场。杭州富加镓业科技有限公司(以下简称“富加镓业”)凭借在超宽禁带半导体氧化镓领域的硬核突破,一举荣膺 “半导体材料技术创新奖”。这不仅是对富加镓业近年来卓越成就的权威认可,更是对“富加速度”最响亮的注解。
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusio ...