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2026年3月31日,九峰山实验室传来振奋人心的捷报:其团队成功研制出击穿电压超过9000V(实测9.02 kV)的氧化镓横向MOSFET【突破9000V!九峰山实验室刷新氧化镓MOSFET耐压纪录】。在多数公开报道还停留在4000V以下的今天,这一成果以"翻倍式"的跨越,一举刷新了氧化镓耐压世界纪录,标志着我国在超高压氧化镓功率器件技术领域正式迈入国际先进行列。
Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating (100) β-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusio ...